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1000V 15A APT15DQ100B APT15DQ100BG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
(B) TO
PRODUCT APPLICATIONS
* Anti-Parallel Diode -Switchmode Power Supply -Inverters * Free Wheeling Diode -Motor Controllers -Converters -Inverters * Snubber Diode * PFC
PRODUCT FEATURES
* Ultrafast Recovery Times * Soft Recovery Characteristics * Popular TO-247 Package * Low Forward Voltage * Low Leakage Current * Avalanche Energy Rated
PRODUCT BENEFITS
* Low Losses * Low Noise Switching * Cooler Operation * Higher Reliability Systems * Increased System Power Density
1 2
-2 4
7
1
2
1 - Cathode 2 - Anode Back of Case - Cathode
MAXIMUM RATINGS
Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM EAVL TJ,TSTG TL Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage
All Ratings: TC = 25C unless otherwise specified.
APT15DQ100B(G) UNIT
1000
Volts
Maximum Average Forward Current (TC = 126C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Avalanche Energy (1A, 40mH) Operating and StorageTemperature Range Lead Temperature for 10 Sec.
15 29 80 20 -55 to 175 300
mJ C Amps
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions IF = 15A VF Forward Voltage IF = 30A IF = 15A, TJ = 125C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V VR = 1000V VR = 1000V, TJ = 125C MIN TYP MAX UNIT
2.5 3.06 1.92
3.0
Volts
100 500 12
Microsemi Website - http://www.microsemi.com
053-4225 Rev B
pF
7-2006
A
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 15A, diF/dt = -1000A/s VR = 667V, TC = 125C IF = 15A, diF/dt = -200A/s VR = 667V, TC = 125C IF = 15A, diF/dt = -200A/s VR = 667V, TC = 25C Test Conditions IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C MIN TYP 20
APT15DQ100B(G)
MAX UNIT ns nC
-
235 185 3 300 810 6 125 1150 19 -
Amps ns nC Amps ns nC Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC WT Characteristic / Test Conditions Junction-to-Case Thermal Resistance Package Weight MIN TYP MAX UNIT C/W oz g
1.18 0.22 5.9 10 1.1
lb*in N*m
Torque
Maximum Mounting Torque
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
1.20 , THERMAL IMPEDANCE (C/W) D = 0.9 1.00 0.80 0.60 0.40 0.20 0 0.7
0.5
Note:
PDM
0.3
t1 t2
Z
0.1 0.05 10
-5
SINGLE PULSE 10-4
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
JC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
TJ (C)
7-2006
0.676 Dissipated Power (Watts) 0.00147 0.0440
TC (C)
0.504 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
053-4225 Rev B
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
ZEXT
TYPICAL PERFORMANCE CURVES
45 40 IF, FORWARD CURRENT (A) 35 30 25 20 15 10 5 0 0 TJ = 175C trr, REVERSE RECOVERY TIME (ns)
400 350 300 250 200 150 100 50 15A 30A
APT15DQ100B(G)
T = 125C J V = 667V
R
TJ = 125C TJ = 25C TJ = -55C
7.5A
1 2 3 4 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage 2000 Qrr, REVERSE RECOVERY CHARGE (nC) 1800 1600 1400 1200 1000 800 600 400 200 0 7.5A 15A
T = 125C J V = 667V
R
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 3. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 25
T = 125C J V = 667V
R
0
30A
30A
20
15
15A
10
7.5A
5
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.0 trr 0.8 0.6 0.4 0.2 0.0 IRRM Qrr
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 5. Reverse Recovery Current vs. Current Rate of Change 35 30 25 IF(AV) (A) 20 15 10 5
Duty cycle = 0.5 T = 175C
J
0
trr
Qrr
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6. Dynamic Parameters vs. Junction Temperature
80 CJ, JUNCTION CAPACITANCE (pF) 70 60 50 40
0
75 100 125 150 175 Case Temperature (C) Figure 7. Maximum Average Forward Current vs. CaseTemperature
0
25
50
20 10
10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage
0
1
053-4225 Rev B
7-2006
30
APT15DQ100B(G)
Vr +18V 0V D.U.T. 30H
trr/Qrr Waveform
diF /dt Adjust
APT10035LLL
PEARSON 2878 CURRENT TRANSFORMER
Figure 9. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
0.25 IRRM
5
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Cathode
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
7-2006
19.81 (.780) 20.32 (.800)
053-4225 Rev B
Anode
2.21 (.087) 2.59 (.102)
Cathode
10.90 (.430) BSC
Dimensions in Millimeters and (Inches) Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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